CUED Publications database

Improving Current Controllability in Bi-Mode Gate Commutated Thyristors

Lophitis, N and Antoniou, M and Udrea, F and Vemulapati, U and Arnold, M and Nistor, I and Vobecky, J and Rahimo, M (2015) Improving Current Controllability in Bi-Mode Gate Commutated Thyristors. IEEE Transactions on Electron Devices, 62. pp. 2263-2269. ISSN 0018-9383

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© 2015 IEEE. The Bi-mode gate commutated thyristor (BGCT) is a new type of reverse conducting Gate Commutated Thyristor (GCT). This paper focuses on the maximum controllable current capability of BGCTs and proposes new solutions which can increase it. The impact of proposed solutions in the turn-ON and turn-OFF is also assessed. For this analysis, a 2-D mixed mode model for full-wafer device simulations has been developed and utilized.

Item Type: Article
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:43
Last Modified: 19 Jul 2018 07:10