CUED Publications database

Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

Dauber, J and Sagade, AA and Oellers, M and Watanabe, K and Taniguchi, T and Neumaier, D and Stampfer, C (2015) Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride. Applied Physics Letters, 106. ISSN 0003-6951

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Abstract

© 2015 AIP Publishing LLC. The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50 nT/ Hz making our graphene sensors highly interesting for industrial applications.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 18:59
Last Modified: 23 Nov 2017 03:59
DOI: