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Growth and characterization of CdZn(S<inf>1-x</inf>Se<inf>x</inf>)<inf>2</inf> alloy film deposited by solution growth technique

Chavhan, SD and Bagul, SV and Ahire, RR and Deshpande, NG and Sagade, AA and Gudage, YG and Sharma, R (2007) Growth and characterization of CdZn(S<inf>1-x</inf>Se<inf>x</inf>)<inf>2</inf> alloy film deposited by solution growth technique. Journal of Alloys and Compounds, 436. pp. 400-406. ISSN 0925-8388

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Abstract

The n-CdZn(S 1-x Se x ) 2 thin films have been deposited by solution growth technique. The various deposition parameters such as pH of solution (10.5), time, concentration of ions and temperature have been optimized. In order to achieve uniform films, triethanolamine (TEA) has been used. The as deposited films have been annealed in rapid thermal annealing (RTA) system at 250 °C in air for 5 min. The surface morphology, compositional ratio, structural properties have been studied by SEM, EDAX and XRD techniques, respectively. The XRD study shows that all the films are of polycrystalline in nature and exhibits the hexagonal and cubic structure for the composition x = 0.0-0.7 and x > 0.7, respectively. For hexagonal structure, the lattice constants 'a' varies from 4.13 Å to 4.04 Å and 'c' = 6.615 Å to 6.514 Å and for cubic structure 'a' varies from 5.629 Å to 5.598 Å. The absorption coefficient 'α' varies in the range 2 × 10 4 cm -1 to 17 × 10 4 cm -1 . Band gap values were calculated from the transmittance spectra, which showed a non-linear variation with respect to composition 'x'. © 2006 Elsevier B.V. All rights reserved.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:35
Last Modified: 17 Aug 2017 01:25
DOI: