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Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

Antoniou, M and Lophitis, N and Bauer, F and Nistor, I and Bellini, M and Rahimo, M and Amaratunga, G and Udrea, F (2015) Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors. IEEE Electron Device Letters, 36. pp. 823-825. ISSN 0741-3106

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Abstract

© 2015 IEEE. In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge compensating layers featured at the cathode of the device is presented and analyzed. The superjunction or reduced surface effect proves to be very effective in overcoming the inherited ON-state versus breakdown tradeoff appearing in conventional devices, such as the soft punch through plus or field stop plus (FS+) IGBTs. This design enhances the ON-state performance of the FS+IGBT by increasing the plasma concentration at the cathode side without affecting either the switching performance or the breakdown rating.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:42
Last Modified: 23 Nov 2017 04:16
DOI: