CUED Publications database

A physics-based model of gate-tunable metal-graphene contact resistance benchmarked against experimental data

Chaves, FA and Jiménez, D and Sagade, AA and Kim, W and Riikonen, J and Lipsanen, H and Neumaier, D (2015) A physics-based model of gate-tunable metal-graphene contact resistance benchmarked against experimental data. 2D Materials, 2.

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Abstract

© 2015 IOP Publishing Ltd. Metal-graphene contact resistance is a technological bottleneck in the realization of viable graphenebased electronics.Wereport a model that is useful for finding the gate-tunable components of this resistance, determined by the tunneling of carriers between the 3D metal and 2D graphene underneath, followed by Klein tunneling to the graphene in the channel. This model quantifies the intrinsic factors that control that resistance, including the effect of unintended chemical doping. Our results agree with experimental results for several metals.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:31
Last Modified: 07 Sep 2017 01:48
DOI: