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The dynamics of surface donor traps in AlGaN/GaN MISFETs using transient measurements and TCAD modelling

Longobardi, G and Udrea, F and Sque, S and Croon, J and Hurkx, F and Šonský, J (2015) The dynamics of surface donor traps in AlGaN/GaN MISFETs using transient measurements and TCAD modelling. In: UNSPECIFIED 17.1.1-17.1.4..

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Abstract

© 2014 IEEE. This paper presents a detailed and correlated (i) Id-Vg, (ii) Cgg-Vg, and (iii) transient analysis of donor traps in a SiN/GaN/AlGaN/GaN Metal-Insulator-Semiconductor Field-Effect Transistor (MISFET) fabricated on a silicon substrate. We explain for the first time that the long-time constants are due to the close coupling between the emission/capture processes on one hand and the transient transport of electrons across the GaN/AlGaN barrier on the other. Emission and capture time constants were extracted for several bias conditions and temperatures. Moreover, we have developed a TCAD model that consistently gives a good match to DC, AC, and transient experimental results.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:19
Last Modified: 14 Sep 2017 01:27
DOI: