CUED Publications database

Measurements of current-voltage characteristics of high-speed SiC and GaN power devices in nanosecond time scale

Ardaravičius, L and Kelly, MJ and Kappers, M and Kiprijanovič, O and Whelan, S (2009) Measurements of current-voltage characteristics of high-speed SiC and GaN power devices in nanosecond time scale. In: UNSPECIFIED pp. 63-67..

Full text not available from this repository.

Abstract

Wide gap semiconductors such as GaN and SiC have extremely large values of breakdown fields. Measurements of currentvoltage characteristics of the wide gap semiconductor devices using power electrical pulses can induce damage of the devices due to Joule heating. In our experiments the 4H-SiC sample and the GaN Gunn diode were placed in series to the transmission line, and a gauge resistor was used for the determination of incident pulse amplitude, in order to perform measurements using nanosecond pulses and, by this, to eliminate Joule heating. It is argued that the devices operating at high electric field (over 50 kV/cm) can be damaged by electrical pulses of nanosecond duration due to overheating which begins at submicron inhomogeneities during the pulse rise time. © Lithuanian Physical Society, 2009.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Unnamed user with email sms67@cam.ac.uk
Date Deposited: 17 Jul 2017 19:05
Last Modified: 18 Nov 2017 21:34
DOI: