CUED Publications database

Graphene oxide/PEDOT:PSS as injection layer for quantum dot light emitting diode

Chen, J and Pan, J and Huang, Q and Xu, F and Zhang, Z and Lei, W and Nathan, A (2015) Graphene oxide/PEDOT:PSS as injection layer for quantum dot light emitting diode. Physica Status Solidi (A) Applications and Materials Science, 212. pp. 2856-2861. ISSN 1862-6300

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Abstract

© 2015 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim. We report a color-saturated, red quantum dot light-emitting diode (QD-LED) using graphene oxide doped PEDOT:PSS (PEDOT-GO) as the hole injection layer (HTL) to optimize the band offset between the HTL and emitting layers. As the doping concentration of the GO increases, the valence band of the PEDOT-GO down-shifts by 0.66 eV approaching that of the QDs. Meanwhile, the conductivity and transparency linearly changes as the doping concentration of GO increases. The QD-LEDs show a maximum luminance of up to 4200 cd/m 2 , corresponding to 7.5 lm/W in power efficiency and a turn-on voltage of 1.6 V. It is worth noting that the reduced turn-on voltage can be attributed to the direct exciton recombination within the QDs. Overall, there is a sixfold enhancement in the performance of the QD-LED with graphene oxide due to the higher hole injection/transfer rate and lower operating voltage.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:41
Last Modified: 03 Aug 2017 03:04
DOI: