CUED Publications database

Defect-mediated modulation of optical properties in vertically aligned ZnO nanowires via substrate-assisted Ga incorporation.

Park, JB and Chun, YT and Lee, YB and Sohn, JI and Hong, W-K (2015) Defect-mediated modulation of optical properties in vertically aligned ZnO nanowires via substrate-assisted Ga incorporation. Nanotechnology, 26. 145202-.

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Abstract

We report the defect-mediated modulation of optical properties in vertically aligned ZnO nanowires via a substrate-assisted Ga incorporation method. We find that Ga atoms were incorporated into a ZnO lattice via the diffusion of liquid Ga droplets from a GaAs substrate in which as-grown ZnO nanowires were placed face down on the GaAs substrate and annealed at 650 °C. Based on structural and compositional characterization, it was confirmed that the substrate-assisted incorporation of Ga can induce a high defect density in vertically aligned ZnO nanowires grown on a Si substrate. In addition, distinct differences in optical properties between as-grown and Ga-incorporated ZnO nanowires were found and discussed in terms of defect-mediated modifications of energy band states, which were associated with the generation and recombination of photoexcited carriers. Furthermore, it was clearly observed that for Ga-incorporated ZnO nanowires, the photocurrent rise and decay processes were slower and the photocurrents under UV illumination were significantly higher compared with as-grown nanowires.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Photonics
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:18
Last Modified: 07 Sep 2017 01:42
DOI: