CUED Publications database

Picosecond Injection Laser: A New Technique for Ultrafast Q-Switching

Vasil'Ev, PP (1988) Picosecond Injection Laser: A New Technique for Ultrafast Q-Switching. IEEE Journal of Quantum Electronics, 24. pp. 2386-2391. ISSN 0018-9197

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Abstract

A new modification of a method for self-Q-switching in a laser with an isotypic saturable absorber is suggested and implemented in a multisegmented injection laser. The idea consists of the transportation of most parts of the excited absorber population to the amplifier. The carrier transport time must be less than the spontaneous recombination time in the absorber. In a three-section AlGaAs/GaAs DH laser with modified Q-switching (MQS) optical pulses of 5 ps in duration with a repetition rate as high as 18.5 GHz and peak power above 10 W have been obtained. To our knowledge, the latter value is the largest ever reported for a picosecond injection laser. Unique temporal and spectral features exhibited by these lasers have been observed, including the stepped variation of pulse repetition frequency, its dependence on the pump current, the vast emission spectral width (on the order of kT), spectral chaos and bistability, and some others. © 1988 IEEE

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Photonics
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:43
Last Modified: 03 Aug 2017 03:13
DOI: