CUED Publications database

Creating New VLS Silicon Nanowire Contact Geometries by Controlling Catalyst Migration.

Alam, SB and Panciera, F and Hansen, O and Mølhave, K and Ross, FM (2015) Creating New VLS Silicon Nanowire Contact Geometries by Controlling Catalyst Migration. Nano Lett, 15. pp. 6535-6541.

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Abstract

The formation of self-assembled contacts between vapor-liquid-solid grown silicon nanowires and flat silicon surfaces was imaged in situ using electron microscopy. By measuring the structural evolution of the contact formation process, we demonstrate how different contact geometries are created by adjusting the balance between silicon deposition and Au migration. We show that electromigration provides an efficient way of controlling the contact. The results point to novel device geometries achieved by direct nanowire growth on devices.

Item Type: Article
Uncontrolled Keywords: CVD Nanowire integration Si nanowire growth TEM cantilever in situ manipulation
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:43
Last Modified: 23 Nov 2017 04:16
DOI: