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Low Speed Crack Propagation via Kink Formation and Advance on the Silicon (110) Cleavage Plane

Kermode, JR and Gleizer, A and Kovel, G and Pastewka, L and Csányi, G and Sherman, D and De Vita, A (2015) Low Speed Crack Propagation via Kink Formation and Advance on the Silicon (110) Cleavage Plane. Physical Review Letters, 115. 135501-. ISSN 0031-9007

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Abstract

© 2015 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the «http://creativecommons.org/licenses/by/3.0/» Creative Commons Attribution 3.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. We present density functional theory based atomistic calculations predicting that slow fracturing of silicon is possible at any chosen crack propagation speed under suitable temperature and load conditions. We also present experiments demonstrating fracture propagation on the Si(110) cleavage plane in the ∼100m/s speed range, consistent with our predictions. These results suggest that many other brittle crystals could be broken arbitrarily slowly in controlled experiments.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div C > Applied Mechanics
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 18:59
Last Modified: 02 Mar 2021 07:39
DOI: 10.1103/PhysRevLett.115.135501