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An experimental demonstration of a 4.5 kV 'Bi-mode Gate Commutated Thyristor' (BGCT)

Vemulapati, U and Arnold, M and Rahimo, M and Vobecky, J and Stiasny, T and Lophitis, N and Udrea, F (2015) An experimental demonstration of a 4.5 kV 'Bi-mode Gate Commutated Thyristor' (BGCT). In: UNSPECIFIED pp. 109-112..

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Abstract

© 2015 IEEE. In this work we present the first experimental results of a Bi-mode Gate Commutated Thyristor (BGCT). The BGCT is a new type of Reverse Conducting-Integrated Gate Commutated Thyristor (RC-IGCT). In a conventional RC-IGCT, the IGCT and diode are integrated into a single wafer but they are fully separated from each other. The novel BGCT on the other hand features an interdigitated integration of diode- and GCT-areas. This interdigitated integration results in an improved diode as well as GCT area, better thermal distribution, soft turn-off/reverse recovery and lower leakage current compared to conventional RC-IGCTs. We have discussed the advantages of a new diode anode design in BGCT, which is shallower than that of the conventional RC-IGCT. We have successfully demonstrated the BGCT concept with 38 mm, 4.5 kV prototypes and compared the on-state, turn-off and blocking characteristics with conventional RC-IGCTs both in GCT- and diode-modes of operation.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:41
Last Modified: 17 Aug 2017 01:25
DOI: