CUED Publications database

Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses

Antoniou, M and Lophitis, N and Udrea, F and Bauer, F and Nistor, I and Bellini, M and Rahimo, M (2015) Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses. In: UNSPECIFIED pp. 21-24..

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Abstract

© 2015 IEEE. A new IGBT type structure, namely the p-ring FS+ Trench IGBT, with improved performance has been demonstrated. The improvement has been achieved through the utilization of p doped buried layers (p-rings) which allows for the simultaneous increase in the n enhancement layer doping concentration above the conventional levels without compromising the device breakdown rating. This unique lateral charge compensation approach is demonstrated to be highly effective in lowering the on-state losses. The experimental results show a 20% reduction in the on-state losses for a 1.7kV device.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:41
Last Modified: 19 Oct 2017 01:29
DOI: