CUED Publications database

Carbon nanotube lateral field emission devices

Lee, SB and Teh, AS and Teo, KBK and Hasko, DG and Ahmed, H and Milne, WI and Amaratunga, GAJ (2003) Carbon nanotube lateral field emission devices. In: UNSPECIFIED pp. 70-71..

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Recent progress in caibon nanotube synthesis has made it possible for a carbon nanotube to be grown vertically, as well as laterally, on a substrate at designated sites [1,2]. This has made possible application of carbon nanotubes as nanoelectronic components. However, there is no known method of controlling the chirality of carbon nanotubes during synthesis, making it difficult to select semiconducting carbon nanotubes with a fixed energy gap for high- density integrated circuit application. Therefore it may be useful to have a device that does not rely on the transport properties of the carbon nanotubes but still delivers switching capability with gain. One such device is the caibon nanotube gated field emitter [3]. It utilises the superior mechanical strength, the geometric enhancement of the nanotube tip structure and the high current density transport capabilities of the carbon nanotubes.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:42
Last Modified: 13 Apr 2021 07:43
DOI: 10.1109/IVEC.2003.1286062