CUED Publications database

On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain.

Goykhman, I and Sassi, U and Desiatov, B and Mazurski, N and Milana, S and de Fazio, D and Eiden, A and Khurgin, J and Shappir, J and Levy, U and Ferrari, AC (2016) On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain. Nano Lett, 16. pp. 3005-3013.

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Abstract

We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.

Item Type: Article
Uncontrolled Keywords: Graphene avalanche multiplication photodetectors silicon photonics
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 18:57
Last Modified: 18 Nov 2017 22:00
DOI: