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Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided design simulations of transfer characteristics of metal-insulator-semiconductor field-effect transistors and high-electron-mobility transistors

Longobardi, G and Udrea, F and Sque, S and Croon, J and Hurkx, F and Šonskỳ, J (2015) Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided design simulations of transfer characteristics of metal-insulator-semiconductor field-effect transistors and high-electron-mobility transistors. IET Power Electronics, 8. pp. 2322-2328. ISSN 1755-4535

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Abstract

© The Institution of Engineering and Technology 2015. This study presents a detailed analysis of the Plasma-enhanced chemical vapour deposition (PECVD) silicon-nitride/semiconductor interface of gallium nitride (GaN) transistors through the study of the transfer characteristics of a large-gate-area metal-insulator-semiconductor field-effect transistor (MISFET). I d -V g measurements were performed on several MISFETs across the wafer and for all of them the authors observed strong hysteresis between forward and reverse sweeps and a double kink. These features indicate the presence of traps beneath the gate electrode. Neither the hysteresis nor the kinks were seen in the measured high-electron-mobility transistor (HEMT) characteristics suggesting that the passivation/semiconductor interface is electrically responsible for them. The transfer characteristics of the MISFET have been reproduced using a technology computer-aided design (TCAD) deck that includes fixed charges and donor traps at the passivation/semiconductor interface. The impact of these charges on the I d -V g and their influence on the formation of a surface-inversion layer is here explained through extensive TCAD simulations. This study has also been extended to different temperatures between 35 and 75°C to investigate the change in the transfer characteristics at elevated temperatures. It is shown that the hysteresis observed between forward and reverse sweeps and the transconductance decrease significantly with increasing temperature.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:53
Last Modified: 14 Sep 2017 01:27
DOI: