CUED Publications database

Impact of high-k dielectrics on breakdown performances of SiC and diamond schottky diodes

Brezeanu, C and Brezeanu, M and Boianceanu, C and Udrea, F and Amaratunga, GAJ and Godignon, P (2009) Impact of high-k dielectrics on breakdown performances of SiC and diamond schottky diodes. In: UNSPECIFIED pp. 983-986..

Full text not available from this repository.

Abstract

© (2009) Trans Tech Publications, Switzerland.This paper presents a comparison between SiC and diamond Schottky barrier diodes using the oxide ramp termination. The influences of the dielectric thickness and relative permittivity on the diode’s electrical performance are investigated. Typical commercial drift layer parameters are used for this study. The extension of the space charge area throughout the drift region and the current distribution at breakdown are shown. The efficiency of the termination is also evaluated for both SiC and diamond diodes.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 20:03
Last Modified: 27 Jul 2017 05:33
DOI: