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Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor-liquid-solid mechanism

Brouzet, V and Salem, B and Periwal, P and Alcotte, R and Chouchane, F and Bassani, F and Baron, T and Ghibaudo, G (2016) Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor-liquid-solid mechanism. Solid-State Electronics, 118. pp. 26-29. ISSN 0038-1101

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Abstract

© 2016 Elsevier Ltd. All rights reserved. We demonstrate the fabrication and electrical characterization of Ω-gate Tunnel Field Effect Transistors (TFET) based on p-Si/i-Si/n + Si 0.7 Ge 0.3 heterostructure nanowires grown by Chemical Vapor Deposition (CVD) using the vapor-liquid-solid (VLS) mechanism. The electrical performances of the p-Si/i-Si/n + Si 0.7 Ge 0.3 heterostructure TFET device are presented and compared to Si and Si 0.7 Ge 0.3 homostructure nanowire TFETs. We observe an improvement of the electrical performances of TFET with p-Si/i-Si/n + Si 0.7 Ge 0.3 heterostructure nanowire (HT NW). The optimized devices present an Ion current of about 245 nA at V DS = -0.5 V and V GS = -3 V with a subthreshold swing around 135 mV/dec. Finally, we show that the electrical results are in good agreement with numerical simulation using Kane's Band-to-Band Tunneling model.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:09
Last Modified: 27 Jul 2017 05:24
DOI: