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Ab-initio simulations of higher Miller index Si:SiO<inf>2</inf> interfaces for fin field effect transistor and nanowire transistors

Li, H and Guo, Y and Robertson, J and Okuno, Y (2016) Ab-initio simulations of higher Miller index Si:SiO<inf>2</inf> interfaces for fin field effect transistor and nanowire transistors. Journal of Applied Physics, 119. ISSN 0021-8979

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Abstract

© 2016 AIP Publishing LLC. Models of three representative higher Miller index interfaces, Si(310):SiO 2 , Si(410):SiO 2 , and Si(331):SiO 2 , have been built by an ab-initio molecular dynamics method. We show that each interface can be made as a fully bonded network without any defects and has a reasonable electronic structure for use in fin field effect transistors or gate-all-around nanowire devices. The differences in numbers of oxygen bridges are attributed to the intermediate sub-oxide components and the atomic step structure. The interface bonding schemes to passivate different densities of dangling bonds on different facets are also analyzed.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:28
Last Modified: 07 Sep 2017 01:44
DOI: