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Investigation into the capabilities of Hall cells integrated in a non-fully depleted SOI CMOS technological process

Paun, MA and Udrea, F (2016) Investigation into the capabilities of Hall cells integrated in a non-fully depleted SOI CMOS technological process. Sensors and Actuators, A: Physical, 242. pp. 43-49. ISSN 0924-4247

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Abstract

© 2016 Elsevier B.V. All rights reserved. The behaviour of SOI Hall cells integrated in a non-fully depleted SOI ("Silicon-On-Insulator") CMOS technology is investigated, with an emphasis on the study of their main parameters. To meet these objectives, a particular optimum structure has been designed, integrated and subsequently analyzed. The performance evaluation of this Hall cell is carried out by means of both a three-dimensional physical model and measurements. The Hall voltage, electrostatic potential distribution and sensitivity have all been evaluated. In addition, the Hall mobility has been studied through simulations. In order to complete the performance assessment of the Hall cells studied, experimental results for the offset and variation of the sensitivity with the temperature are also provided.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:41
Last Modified: 03 Aug 2017 03:05
DOI: