CUED Publications database

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping.

Boland, JL and Casadei, A and Tütüncüoglu, G and Matteini, F and Davies, CL and Jabeen, F and Joyce, HJ and Herz, LM and Fontcuberta I Morral, A and Johnston, MB Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping. ACS Nano, 10. pp. 4219-4227. (Unpublished)

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Abstract

Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time-resolved terahertz photoconductivity for assessing n- and p-type doping efficiency in nanowires. Using this technique, we measure extrinsic electron and hole concentrations in excess of 10(18) cm(-3) for GaAs nanowires with n-type and p-type doped shells. Furthermore, we show that controlled doping can significantly increase the photoconductivity lifetime of GaAs nanowires by over an order of magnitude: from 0.13 ns in undoped nanowires to 3.8 and 2.5 ns in n-doped and p-doped nanowires, respectively. Thus, controlled doping can be used to reduce the effects of parasitic surface recombination in optoelectronic nanowire devices, which is promising for nanowire devices, such as solar cells and nanowire lasers.

Item Type: Article
Uncontrolled Keywords: GaAs carrier lifetime mobility n-type doping nanowires p-type doping photoconductivity surface recombination surface states terahertz spectroscopy
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 18:58
Last Modified: 21 Nov 2017 03:06
DOI: