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Anisotropic Growth of Nonlayered CdS on MoS<inf>2</inf> Monolayer for Functional Vertical Heterostructures

Zheng, W and Feng, W and Zhang, X and Chen, X and Liu, G and Qiu, Y and Hasan, T and Tan, P and Hu, PA (2016) Anisotropic Growth of Nonlayered CdS on MoS<inf>2</inf> Monolayer for Functional Vertical Heterostructures. Advanced Functional Materials, 26. pp. 2648-2654. ISSN 1616-301X

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Abstract

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 2D semiconductors have emerged as a crucial material for use in next-generation optotelectronics. Similar to microelectronic devices, 2D vertical heterostructures will most likely be the elemental components for future nanoscale electronics and optotelectronics. To date, the components of mostly reported 2D van der Waals heterostructures are restricted to layer crystals. In this work, it is demonstrated that nonlayered semiconductors of CdS can be epitaxially grown on to 2D layered MoS 2 substrate to form a new quasi vertical heterostructure with clean interface by chemical vapor deposition. Photodetectors based on this CdS/MoS 2 heterostructure show broader wavelength response and ≈50-fold improvement in photoresponsivity, compared to the devices fabricated from MoS 2 monolayer only. This research opens up a way to fabricate a variety of functional quasi heterostructures from nonlayered semiconductors.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 18:59
Last Modified: 17 Oct 2017 01:39
DOI: