CUED Publications database

New bi-mode gate-commutated thyristor design concept for high-current controllability and low ON-state voltage drop

Lophitis, N and Antoniou, M and Vemulapati, U and Arnold, M and Nistor, I and Vobecky, J and Rahimo, M and Udrea, F (2016) New bi-mode gate-commutated thyristor design concept for high-current controllability and low ON-state voltage drop. IEEE Electron Device Letters, 37. pp. 467-470. ISSN 0741-3106

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Abstract

© 2016 IEEE. A new design approach for bi-mode gatecommutated thyristors (BGCTs) is proposed for high-current controllability and low ON-state voltage drop. Using a complex multi-cell mixed-mode simulation model which can capture the maximum controllable current (MCC) of large area devices, a failure analysis was performed to demonstrate that the new design concept can increase the MCC by about 27% at room temperature and by about 17% at 400 K while minimizing the ON-state voltage drop. The simulations depict that the improvement comes from the new approach to terminate the GCT part in the BGCT way of intertwining GCT and diode regions for reverse conducting operation.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:11
Last Modified: 23 Nov 2017 04:23
DOI: