CUED Publications database

Operation of suspended lateral SOI PIN photodiode with aluminum back gate

Li, G and Andre, N and Poncelet, O and Gerard, P and Ali, SZ and Udrea, F and Francis, LA and Zeng, Y and Flandre, D (2016) Operation of suspended lateral SOI PIN photodiode with aluminum back gate. In: UNSPECIFIED pp. 155-158..

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Abstract

© 2016 IEEE. In this paper, we report a lateral silicon-on-insulator (SOI) P+P-N+ (PIN) photodiode suspended on a micro-hotplate platform, with aluminum (Al) layer deposited on backside. Voltage applied to the Al back gate can modify the depletion condition in the intrinsic (I) region. The device output photocurrent reaches a maximum under fully-depleted (FD) condition achieved by the positive back-gate bias. Moreover, the backside Al acts as a excellent reflector, which for specific wavelength ranges (around 500, 600, 770 nm) significantly boosts optical response of the SOI PIN photodiode. Over 2∼3× improvements of responsivity (up to R = 0.1 A/W at 590 nm) have been achieved and validated in the measurements at 490, 590, 760 nm. Full optoelectronic two-dimensional (2-D) device simulations are conducted in Atlas software to comprehensively validate the device performance and improvement.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:10
Last Modified: 07 Sep 2017 01:46
DOI: