CUED Publications database

Investigation of dead-time behaviour in GaN DC-DC buck converter with a negative gate voltage

Roschatt, PM and McMahon, RA and Pickering, S (2015) Investigation of dead-time behaviour in GaN DC-DC buck converter with a negative gate voltage. In: UNSPECIFIED pp. 1047-1052..

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Abstract

© 2015 Korean Institute of Power Electronics. The low threshold voltage of Gallium Nitride enhancement mode FETs is a concern in high current high frequency synchronous DC-DC buck converters. Applying a negative gate voltage to the low side FET to improve the dV/dt robustness increases the voltage drop between source and drain during dead-time conduction. This has consequences not only on the efficiency, but more importantly on the bootstrap voltage. Even with precise dead-timing, the large voltage drop from drain to source still results in a significant variation of the bootstrap voltage. This results in a change of gate turn on speed and increases the dV/dt stress. The very short dead-time needed to avoid great variations in the bootstrap voltage means that the voltage drop from source to drain can no longer bet treated as a constant as it varies greatly during the dead-time.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:36
Last Modified: 03 Aug 2017 03:09
DOI: