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Sensitive Electronic-Skin Strain Sensor Array Based on the Patterned Two-Dimensional α-In<inf>2</inf>Se<inf>3</inf>

Feng, W and Zheng, W and Gao, F and Chen, X and Liu, G and Hasan, T and Cao, W and Hu, P (2016) Sensitive Electronic-Skin Strain Sensor Array Based on the Patterned Two-Dimensional α-In<inf>2</inf>Se<inf>3</inf>. Chemistry of Materials, 28. pp. 4278-4283. ISSN 0897-4756

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© 2016 American Chemical Society. Two-dimensional (2D) layered semiconductors have emerged as a highly attractive class of materials for flexible and wearable strain sensor-centric devices such as electronic-skin (e-skin). This is primarily due to their dimensionality, excellent mechanical flexibility, and unique electronic properties. However, the lack of effective and low-cost methods for wafer-scale fabrication of these materials for strain sensor arrays limits their potential for such applications. Here, we report growth of large-scale 2D In2Se3 nanosheets by templated chemical vapor deposition (CVD) method, using In2O3 and Se powders as precursors. The strain sensors fabricated from the as-grown 2D In2Se3 films show 2 orders of magnitude higher sensitivity (gauge factor ∼237 in -0.39% to 0.39% uniaxial strain range along the device channel length) than what has been demonstrated from conventional metal-based (gauge factor: ∼1-5) and graphene-based strain sensors (gauge factor: ∼2-4) in a similar uniaxial strain range. The integrated strain sensor array, fabricated from the template-grown 2D In2Se3 films, exhibits a high spatial resolution of ∼500 μm in strain distribution. Our results demonstrate the applicability and highly attractive properties of 2D layered semiconductors in e-skins for robotics and human body motion monitoring.

Item Type: Article
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:07
Last Modified: 04 Mar 2021 04:06
DOI: 10.1021/acs.chemmater.6b01073