CUED Publications database

Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching.

Cho, S and Yun, C and Tappertzhofen, S and Kursumovic, A and Lee, S and Lu, P and Jia, Q and Fan, M and Jian, J and Wang, H and Hofmann, S and MacManus-Driscoll, JL (2016) Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching. Nat Commun, 7. 12373-.

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Abstract

Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO2 and SrTiO3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (∼10(12) inch(-2)). We systematically show that these devices allow precise engineering of the resistance states, thus enabling large on-off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 18:57
Last Modified: 23 Sep 2017 20:07
DOI: