CUED Publications database

Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

Chun, M and Um, JG and Park, MS and Chowdhury, MDH and Jang, J (2016) Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor. AIP Advances, 6.

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Abstract

© 2016 Author(s). We report the abnormal behavior of the threshold voltage (V TH ) shift under positive bias Temperature stress (PBTS) and negative bias temperature stress (NBTS) at top/bottom gate in dual gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). It is found that the PBTS at top gate shows negative transfer shift and NBTS shows positive transfer shift for both top and bottom gate sweep. The shift of bottom/top gate sweep is dominated by top gate bias (V TG ), while bottom gate bias (V BG ) is less effect than V TG . The X-ray photoelectron spectroscopy (XPS) depth profile provides the evidence of In metal diffusion to the top SiO 2 /a-IGZO and also the existence of large amount of In + under positive top gate bias around top interfaces, thus negative transfer shift is observed. On the other hand, the formation of OH - at top interfaces under the stress of negative top gate bias shows negative transfer shift. The domination of V TG both on bottom/top gate sweep after PBTS/NBTS is obviously occurred due to thin active layer.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:43
Last Modified: 03 Aug 2017 03:14
DOI: