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Analysis of Improved Performance under Negative Bias Illumination Stress of Dual Gate Driving a-IGZO TFT by TCAD Simulation

Billah, MM and Chowdhury, MDH and Mativenga, M and Um, JG and Mruthyunjaya, RK and Heiler, GN and Tredwell, TJ and Jang, J (2016) Analysis of Improved Performance under Negative Bias Illumination Stress of Dual Gate Driving a-IGZO TFT by TCAD Simulation. IEEE Electron Device Letters, 37. pp. 735-738. ISSN 0741-3106

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Abstract

© 1980-2012 IEEE. We report the numerical simulation of the effect of a dual gate (DG) TFT structure operating under dual gate driving on improving negative bias illumination stress (NBIS) of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). With respect to the transfer characteristics of a-IGZO TFTs, we show a larger negative threshold voltage shift (ΔV TH ) with increasing a-IGZO active layer thickness. This trend is confirmed by TCAD simulation, where the initial transfer curve is plotted under varying a-IGZO thickness keeping a constant density of states. Under varying a-IGZO thickness, TCAD simulation results confirm TFTs under DG driving shows significantly less ΔV TH shift under NBIS compared with that of single gate (SG) driving TFTs. Under 10 K seconds of NBIS, TCAD simulation results show the increase in donor-like states (N GD ) by 5.25 × 10 17 cm -3 eV -1 and acceptor-like states (NGA) by 7.5 × 10 16 cm -3 eV -1 .

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:43
Last Modified: 12 Oct 2017 01:52
DOI: