CUED Publications database

Zero reverse recovery in SiC and GaN Schottky diodes: A comparison

Efthymiou, L and Longobardi, GCG and Udrea, F and Lin, E and Chien, T and Chen, M (2016) Zero reverse recovery in SiC and GaN Schottky diodes: A comparison. In: UNSPECIFIED pp. 71-74..

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Abstract

© 2016 IEEE. Similarly to the unipolar SiC Schottky diodes, AlGaN/GaN Schottky devices have been suggested to have a negligible reverse recovery current during turn-off and can therefore be switched at very high frequencies with low power losses [1-2]. This study aims to investigate this claim by comparing the reverse recovery characteristic of an AlGaN/GaN diode with that of a SiC diode and a fast recovery Si P-N diode for the same current (4 A) and voltage rating (700 V). TCAD models of a SiC Schottky diode and an AlGaN/GaN diode have been developed and calibrated against fabricated devices for a better physical understanding of the experimentally observed results. The analysis is based on the trade-off between on-state and reverse recovery parameters at both room and high temperatures. Experimental and TCAD results show that while the AlGaN/GaN heterostructure Schottky diode is expected to provide a significant improvement in switching performance when compared to the conventional bipolar Si P-N diodes, the SiC diode offers a more favourable trade-off between on-state and reverse recovery.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:37
Last Modified: 14 Sep 2017 01:27
DOI: