CUED Publications database

All ink-jet printed low-voltage organic field-effect transistors on flexible substrate

Feng, L and Jiang, C and Ma, H and Guo, X and Nathan, A (2016) All ink-jet printed low-voltage organic field-effect transistors on flexible substrate. Organic Electronics: physics, materials, applications, 38. pp. 186-192. ISSN 1566-1199

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Abstract

© 2016 In this work, all ink-jet printed (IJP) low-voltage organic field-effect transistors (OFETs) on flexible substrate are reported. The OFETs use IJP silver (Ag) for source/drain/gate electrodes, poly(4-vinylphenol) (PVP) for gate dielectric, 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) blended with polystyrene (PS) as the semiconducting layer and CYTOP for encapsulation layer. All the printing processes were carried out in ambient air environment using a single laboratory ink-jet printer Dimatix DMP-2831. The all IJP device presents state-of-the-art performance with low operation voltage down to 3 V, small subthreshold swing (SS) of 0.155 V/decade, mobility of 0.26 cm 2 V −1 s −1 , threshold voltage (V th ) of −0.17 V and on/off ratio of 3.1 × 10 5 , along with a yield of 62.5%. Through interface engineering and proper process optimization, this work demonstrates a promising low-voltage all IJP device platform for low-cost flexible printed electronics.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:10
Last Modified: 09 Nov 2017 01:28
DOI: