CUED Publications database

Carbon-Based Resistive Memories

Koelmans, WW and Bachmann, T and Zipoli, F and Ott, AK and Dou, C and Ferrari, AC and Cojocaru-Miredin, O and Zhang, S and Scheu, C and Wuttig, M and Nagareddy, VK and Craciun, MF and Alexeev, AM and Wright, CD and Jonnalagadda, VP and Curioni, A and Sebastian, A and Eleftheriou, E (2016) Carbon-Based Resistive Memories. In: UNSPECIFIED.

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Abstract

© 2016 IEEE. Carbon-based nonvolatile resistive memories are an emerging technology. Switching endurance remains a challenge in carbon memories based on tetrahedral amorphous carbon (ta-C). One way to counter this is by oxygenation to increase the repeatability of reversible switching. Here, we overview the current status of carbon memories. We then present a comparative study of oxygen-free and oxygenated carbon-based memory devices, combining experiments and molecular dynamics (MD) simulations.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:31
Last Modified: 17 Aug 2017 01:24
DOI: