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Investigation of fatigue behavior of Pb(Zr<inf>0.45</inf>Ti<inf>0.55</inf>)O<inf>3</inf> thin films under asymmetric polarization switching

Zhu, H and Chen, Y and Chu, D and Feng, S and Zhang, Y and Wang, P (2016) Investigation of fatigue behavior of Pb(Zr<inf>0.45</inf>Ti<inf>0.55</inf>)O<inf>3</inf> thin films under asymmetric polarization switching. Japanese Journal of Applied Physics, 55.

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Abstract

© 2016 The Japan Society of Applied Physics.The fatigue of lead zirconate titanate (PZT) thin films was measured under repetitive switching using asymmetric square waves. The remnant polarization and coercive voltage were found to present regular changes in the initial 10 s, independent of the asymmetry or frequency of switching waves. We attributed the change to the relaxation of stress in the film and identified a coercive voltage V0 of 0.6V for the stress-free film. By comparing the coercive voltage and V0, we found that a built-in electric field was induced by asymmetric switching, where the direction and magnitude were dependent on the degree of waveform asymmetry. Furthermore, the fatigue speed was suggested to be closely related to the generation rate of oxygen vacancies. It was confirmed by our result that a faster decay of remnant polarization can be obtained by applying square waves with a higher degree of asymmetry or symmetry of square waves with a lower frequency.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Photonics
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:36
Last Modified: 02 Nov 2017 01:35
DOI: