CUED Publications database

All-inorganic quantum-dot light-emitting-diodes with vertical nickel oxide nanosheets as hole transport layer

Li, J and Shao, Y and Chen, X and Wang, H and Li, Y and Zhang, Q (2016) All-inorganic quantum-dot light-emitting-diodes with vertical nickel oxide nanosheets as hole transport layer. Progress in Natural Science: Materials International, 26. pp. 503-509. ISSN 1002-0071

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Abstract

© 2016 Chinese Materials Research Society All-inorganic quantum dot light emitting diodes (QLEDs) have gained great attention as a result of their high stability under oxygen-rich, humid and high current working conditions. In this work, we have fabricated an all-inorganic QLED device (FTO/NiO/QDs/AZO/Ag) with sandwich-structure, wherein the inorganic metal oxides thin films of NiO and AZO were employed as hole and electron transport layers, respectively. The porous NiO layer with vertical lamellar nanosheets interconnected microstructure have been directly synthesized on the substrate of conductive FTO glass and increased the wettability of CdSe@ZnS QDs, which result in an enhancement of current transport performance of the QLED.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:39
Last Modified: 14 Nov 2017 02:20
DOI: