CUED Publications database

Electronic properties of CVD graphene: The role of grain boundaries, atmospheric doping, and encapsulation by ALD

Van Veldhoven, ZA and Alexander-Webber, JA and Sagade, AA and Braeuninger-Weimer, P and Hofmann, S (2016) Electronic properties of CVD graphene: The role of grain boundaries, atmospheric doping, and encapsulation by ALD. Physica Status Solidi (B) Basic Research, 253. pp. 2321-2325. ISSN 0370-1972

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Abstract

© 2016 The Authors. Phys. Status Solidi B published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Grain boundaries and unintentional doping can have profound effects on graphene-based devices. Here we study these in detail for CVD grown poly-crystalline monolayer graphene with two significantly different grain size distributions centered around 10–25 μm and 100–400 μm. Although the two types of graphene are processed under identical conditions after growth, they show distinct transport properties in field effect transistor devices. While all as-fabricated samples showed similar p-type doping, the smaller grain size type graphene with larger number of grain boundaries exhibit lower average mobility. In order to separate out the effects of grain boundaries and doping from ambient exposure on the transport properties, the devices were encapsulated with Al 2 O 3 by atomic layer deposition. The encapsulation of large grain samples thereby showed drastic improvements in the performance with negligible doping while the small grain samples are largely intolerant to this process. We discuss the implications of our data for the integrated manufacturing of graphene-based device platforms.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:30
Last Modified: 17 Oct 2017 01:38
DOI: