Flewitt, AJ and Dutson, JD and Beecher, P and Paul, D and Wakeham, SJ and Vickers, ME and Ducati, C and Speakman, SP and Milne, WI and Thwaites, MJ (2009) Stability of thin film transistors incorporating a zinc oxide or indium zinc oxide channel deposited by a high rate sputtering process. SEMICOND SCI TECH, 24. -. ISSN 0268-1242
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|Item Type: ||Article|
|Uncontrolled Keywords: ||ROOM-TEMPERATURE TRANSPARENT ZNO MOBILITY SEMICONDUCTORS TRANSPORT|
|Depositing User: ||Cron Job|
|Date Deposited: ||20 Dec 2011 12:10|
|Last Modified: ||20 May 2013 01:33|
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