Flewitt, AJ and Dutson, JD and Beecher, P and Paul, D and Wakeham, SJ and Vickers, ME and Ducati, C and Speakman, SP and Milne, WI and Thwaites, MJ (2009) Stability of thin film transistors incorporating a zinc oxide or indium zinc oxide channel deposited by a high rate sputtering process. SEMICOND SCI TECH, 24. -. ISSN 0268-1242
Full text not available from this repository.
| Item Type: | Article |
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| Uncontrolled Keywords: | ROOM-TEMPERATURE TRANSPARENT ZNO MOBILITY SEMICONDUCTORS TRANSPORT |
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| Subjects: | UNSPECIFIED |
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| Divisions: | UNSPECIFIED |
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| Depositing User: | Cron Job |
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| Date Deposited: | 20 Dec 2011 12:10 |
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| Last Modified: | 20 May 2013 01:33 |
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| DOI: | 10.1088/0268-1242/24/8/085002 |
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