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Stability of thin film transistors incorporating a zinc oxide or indium zinc oxide channel deposited by a high rate sputtering process

Flewitt, AJ and Dutson, JD and Beecher, P and Paul, D and Wakeham, SJ and Vickers, ME and Ducati, C and Speakman, SP and Milne, WI and Thwaites, MJ (2009) Stability of thin film transistors incorporating a zinc oxide or indium zinc oxide channel deposited by a high rate sputtering process. SEMICOND SCI TECH, 24. -. ISSN 0268-1242

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Item Type: Article
Uncontrolled Keywords: ROOM-TEMPERATURE TRANSPARENT ZNO MOBILITY SEMICONDUCTORS TRANSPORT
Subjects: UNSPECIFIED
Divisions: UNSPECIFIED
Depositing User: Cron job
Date Deposited: 04 Feb 2015 22:44
Last Modified: 30 Mar 2015 01:29
DOI: 10.1088/0268-1242/24/8/085002