CUED Publications database

Stable, efficient p-type doping of graphene by nitric acid

D'Arsié, L and Esconjauregui, S and Weatherup, RS and Wu, X and Arter, WE and Sugime, H and Cepek, C and Robertson, J (2016) Stable, efficient p-type doping of graphene by nitric acid. RSC Advances, 6. pp. 113185-113192.

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© The Royal Society of Chemistry. We systematically dope monolayer graphene with different concentrations of nitric acid over a range of temperatures, and analyze the variation of sheet resistance after vacuum annealing up to 300 °C. The optimized HNO3doping conditions yield sheet resistances as low as 180 Ω sq.−1, which is significantly more stable under vacuum annealing than previously reported values. Raman and photoemission spectroscopy suggest that this stable graphene doping occurs by a bi-modal mechanism. Under mild conditions the dopants are weakly bonded to graphene, but at high acid temperatures and concentrations, the doping is higher and more stable upon post-doping annealing, without causing significant lattice damage. This work shows that large, stable hole concentrations can be induced by transfer doping in graphene.

Item Type: Article
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:19
Last Modified: 20 Jul 2018 20:23