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Reliable characteristics and stabilization of on-membrane SOI MOSFET-based components heated up to 335°C

Amor, S and André, N and Gérard, P and Ali, SZ and Udrea, F and Tounsi, F and Mezghani, B and Francis, LA and Flandre, D (2017) Reliable characteristics and stabilization of on-membrane SOI MOSFET-based components heated up to 335°C. Semiconductor Science and Technology, 32. ISSN 0268-1242

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Abstract

© 2016 IOP Publishing Ltd. In this work we investigate the characteristics and critical operating temperatures of on-membrane embedded MOSFETs from an experimental and analytical point of view. This study permits us to conclude the possibility of integrating electronic circuitry in the close vicinity of micro-heaters and hot operation transducers. A series of calibrations and measurements has been performed to examine the behaviors of transistors, inverters and diodes, actuated at high temperature, on a membrane equipped with an on-chip integrated micro-heater. The studied n- and p-channel body-tied partially-depleted MOSFETs and CMOS inverter are embedded in a 5 μm-thick membrane fabricated by back-side MEMS micromachining using SOI technology. It has been noted that a pre-stabilization step after the harsh post-CMOS processing, through an in situ high-temperature annealing using the micro-heater, is mandatory in order to stabilize the MOSFETs characteristics. The electrical characterist ics and performance of the on-membrane MOS components are discussed when heated up to 335°C. This study supports the possibility of extending the potential of the micro-hotplate concept, under certain conditions, by embedding more electronic functionalities on the interface of on-membrane-based sensors leading to better sensing and actuation performances and a total area reduction, particularly for environmental or industrial applications.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 18:58
Last Modified: 05 Oct 2017 02:22
DOI: