CUED Publications database

Binding energies of trions and biexcitons in two-dimensional semiconductors from diffusion quantum Monte Carlo calculations

Szyniszewski, M and Mostaani, E and Drummond, ND and Fal'ko, VI (2017) Binding energies of trions and biexcitons in two-dimensional semiconductors from diffusion quantum Monte Carlo calculations. Physical Review B, 95. ISSN 2469-9950

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Abstract

Excitonic effects play a particularly important role in the optoelectronic behavior of two-dimensional (2D) semiconductors. To facilitate the interpretation of experimental photoabsorption and photoluminescence spectra we provide statistically exact diffusion quantum Monte Carlo binding-energy data for Mott-Wannier models of excitons, trions, and biexcitons in 2D semiconductors. We also provide contact pair densities to allow a description of contact (exchange) interactions between charge carriers using first-order perturbation theory. Our data indicate that the binding energy of a trion is generally larger than that of a biexciton in 2D semiconductors. We provide interpolation formulas giving the binding energy and contact density of 2D semiconductors as functions of the electron and hole effective masses and the in-plane polarizability.

Item Type: Article
Uncontrolled Keywords: cond-mat.mes-hall cond-mat.mes-hall
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:11
Last Modified: 10 Apr 2021 00:58
DOI: 10.1103/PhysRevB.95.081301