CUED Publications database

Yttrium passivation of defects in GeO<inf>2</inf>and GeO<inf>2</inf>/Ge interfaces

Li, H and Robertson, J (2017) Yttrium passivation of defects in GeO<inf>2</inf>and GeO<inf>2</inf>/Ge interfaces. Applied Physics Letters, 110. ISSN 0003-6951

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Abstract

© 2017 Author(s). Alloying amorphous GeO2with Y2O3has been found experimentally to improve its chemical stability and electrical reliability as a gate dielectric in Ge-based field effect transistors. The mechanism is explained here based on density functional calculations. The GeO2reliability problem is correlated with oxygen deficiency defects, which generate gap states near the band-edges of the underlying Ge. These can be passivated through Y doping. This shifts the defect gap state out of the gap up into the GeO2conduction band, thus effectively passivating gap states in the GeO2layer.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:00
Last Modified: 19 Jul 2018 06:48
DOI: