CUED Publications database

Superjunction power devices, history, development, and future prospects

Udrea, F and Deboy, G and Fujihira, T (2017) Superjunction power devices, history, development, and future prospects. IEEE Transactions on Electron Devices, 64. pp. 713-727. ISSN 0018-9383

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Abstract

© 1963-2012 IEEE. Superjunction has arguably been the most creative and important concept in the power device field since the introduction of the insulated gate bipolar transistor (IGBT) in the 1980s. It is the only concept known today that has challenged and ultimately proved wrong the well-known theoretical study on the limit of silicon in high-voltage devices. This paper deals with the history, device and process development, and the future prospects of Superjunction technologies. It covers fundamental physics, technological challenges as well as aspects of design and modeling of unipolar devices, such as CoolMOS. The superjunction concept is compared to other methods of enhancing the conductivity of power devices (from bipolar to employment of wide-bandgap materials) to derive its set of benefits and limitations. This paper closes with the application of the superjunction concept to other structures or materials, such as terminations, superjunction IGBTs, or silicon carbide Field Effect Transistors (FETs).

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:11
Last Modified: 05 Oct 2017 02:19
DOI: