CUED Publications database

In-situ thermal annealing of on-membrane silicon-on-insulator semiconductor-based devices after high gamma dose irradiation.

Amor, S and André, N and Kilchytska, V and Tounsi, F and Mezghani, B and Gérard, P and Ali, Z and Udrea, F and Flandre, D and Francis, LA (2017) In-situ thermal annealing of on-membrane silicon-on-insulator semiconductor-based devices after high gamma dose irradiation. Nanotechnology, 28. 184001-.

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Abstract

In this paper, we investigate the recovery of some semiconductor-based components, such as N/P-type field-effect transistors (FETs) and a complementary metal-oxide-semiconductor (CMOS) inverter, after being exposed to a high total dose of gamma ray radiation. The employed method consists mainly of a rapid, low power and in situ annealing mitigation technique by silicon-on-insulator micro-hotplates. Due to the ionizing effect of the gamma irradiation, the threshold voltages showed an average shift of -580 mV for N-channel transistors, and -360 mV for P-MOSFETs. A 4 min double-cycle annealing of components with a heater temperature up to 465 °C, corresponding to a maximum power of 38 mW, ensured partial recovery but was not sufficient for full recovery. The degradation was completely recovered after the use of a built-in high temperature annealing process, up to 975 °C for 8 min corresponding to a maximum power of 112 mW, which restored the normal operating characteristics for all devices after their irradiation.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:11
Last Modified: 08 Aug 2017 01:52
DOI: