Ou, H and Wang, K and Chen, J and Nathan, A and Deng, SZ and Xu, NS (2017) Dual-gate photosensitive FIN-TFT with high photoconductive gain and near-UV to near-IR responsivity. In: UNSPECIFIED 32.5.1-32.5.4..
Full text not available from this repository.Abstract
© 2016 IEEE. We report the first three-dimensional (3-D) fin-shaped dual-gate photosensitive a-Si:H thin-film transistor (FIN-TFT) operating in the sub-threshold regime intended for low-level light detection. The measured photoconductive gain (G ph ) is greater than 100 with photo-response ranging from near-ultraviolet (UV) to near-infrared (IR) wavelengths, making it a potential candidate as an image sensor for UV, visible, IR and biomedical X-ray imaging.
| Item Type: | Conference or Workshop Item (UNSPECIFIED) |
|---|---|
| Subjects: | UNSPECIFIED |
| Divisions: | Div B > Solid State Electronics and Nanoscale Science |
| Depositing User: | Cron Job |
| Date Deposited: | 17 Jul 2017 19:11 |
| Last Modified: | 17 May 2018 05:56 |
| DOI: |
