CUED Publications database

Dual-gate photosensitive FIN-TFT with high photoconductive gain and near-UV to near-IR responsivity

Ou, H and Wang, K and Chen, J and Nathan, A and Deng, SZ and Xu, NS (2017) Dual-gate photosensitive FIN-TFT with high photoconductive gain and near-UV to near-IR responsivity. In: UNSPECIFIED 32.5.1-32.5.4..

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Abstract

© 2016 IEEE. We report the first three-dimensional (3-D) fin-shaped dual-gate photosensitive a-Si:H thin-film transistor (FIN-TFT) operating in the sub-threshold regime intended for low-level light detection. The measured photoconductive gain (G ph ) is greater than 100 with photo-response ranging from near-ultraviolet (UV) to near-infrared (IR) wavelengths, making it a potential candidate as an image sensor for UV, visible, IR and biomedical X-ray imaging.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:11
Last Modified: 02 Nov 2017 01:37
DOI: