CUED Publications database

An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires

Baig, SA and Boland, JL and Damry, DA and Tan, HH and Jagadish, C and Joyce, HJ and Johnston, MB (2017) An Ultrafast Switchable Terahertz Polarization Modulator Based on III-V Semiconductor Nanowires. Nano Letters, 17. pp. 2603-2610.

Full text not available from this repository.

Abstract

Progress in the terahertz (THz) region of the electromagnetic spectrum is undergoing major advances, with advanced THz sources and detectors being developed at a rapid pace. Yet, ultrafast THz communication is still to be realized, owing to the lack of practical and effective THz modulators. Here, we present a novel ultrafast active THz polarization modulator based on GaAs semiconductor nanowires arranged in a wire-grid configuration. We utilize an optical pump-terahertz probe spectroscopy system and vary the polarization of the optical pump beam to demonstrate ultrafast THz modulation with a switching time of less than 5 ps and a modulation depth of -8 dB. We achieve an extinction of over 13% and a dynamic range of -9 dB, comparable to microsecond-switchable graphene- and metamaterial-based THz modulators, and surpassing the performance of optically switchable carbon nanotube THz polarizers. We show a broad bandwidth for THz modulation between 0.1 and 4 THz. Thus, this work presents the first THz modulator which combines not only a large modulation depth but also a broad bandwidth and picosecond time resolution for THz intensity and phase modulation, making it an ideal candidate for ultrafast THz communication.

Item Type: Article
Uncontrolled Keywords: GaAs Terahertz (THz) modulator nanowire parylene polarizer
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:16
Last Modified: 12 Oct 2017 01:47
DOI: