CUED Publications database

Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy.

Cai, H and Chen, B and Wang, G and Soignard, E and Khosravi, A and Manca, M and Marie, X and Chang, SLY and Urbaszek, B and Tongay, S (2017) Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy. Adv Mater, 29. p. 1605551. ISSN 0935-9648

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Abstract

A new member of the layered pseudo-1D material family-monoclinic gallium telluride (GaTe)-is synthesized by physical vapor transport on a variety of substrates. The [010] atomic chains and the resulting anisotropic behavior are clearly revealed. The GaTe flakes display multiple sharp photoluminescence emissions in the forbidden gap, which are related to defects localized around selected edges and grain boundaries.

Item Type: Article
Uncontrolled Keywords: gallium telluride physical vapor transport pseudo-1D materials
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 20:04
Last Modified: 08 Aug 2017 01:50
DOI: