CUED Publications database

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

Efthymiou, L and Longobardi, G and Camuso, G and Chien, T and Chen, M and Udrea, F (2017) On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices. Applied Physics Letters, 110. ISSN 0003-6951

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Abstract

© 2017 Author(s). In this study, an investigation is undertaken to determine the effect of gate design parameters on the on-state characteristics (threshold voltage and gate turn-on voltage) of pGaN/AlGaN/GaN high electron mobility transistors (HEMTs). Design parameters considered are pGaN doping and gate metal work function. The analysis considers the effects of variations on these parameters using a TCAD model matched with experimental results. A better understanding of the underlying physics governing the operation of these devices is achieved with a view to enable better optimization of such gate designs.

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:21
Last Modified: 12 Oct 2017 01:47
DOI: