CUED Publications database

On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs

Efthymiou, L and Camuso, G and Longobardi, G and Chien, T and Chen, M and Udrea, F (2017) On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs. ENERGIES, 10. ISSN 1996-1073

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Item Type: Article
Uncontrolled Keywords: wide band gap semiconductors III-V semiconductors gallium compounds enhancement GaN HEMT switching parasitics inductance SPICE clamped Miller capacitance
Subjects: UNSPECIFIED
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 20:02
Last Modified: 23 Nov 2017 04:15
DOI: