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On the source of oscillatory behaviour during switching of power enhancement mode GaN HEMTs

Efthymiou, L and Camuso, G and Longobardi, G and Chien, T and Chen, M and Udrea, F (2017) On the source of oscillatory behaviour during switching of power enhancement mode GaN HEMTs. Energies, 10. ISSN 1996-1073 (Unpublished)

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© 2017 by the author. With Gallium Nitride (GaN) device technology for power electronics applications being ramped up for volume production, an increasing amount of research is now focused on the performance of GaN power devices in circuits. In this study, an enhancement mode GaN high electron mobility transistor (HEMT) is switched in a clamped inductive switching configuration with the aim of investigating the source of oscillatory effects observed. These arise as a result of the increased switching speed capability of GaN devices compared to their silicon counterparts. The study identifies the two major mechanisms (Miller capacitance charge and parasitic common source inductance) that can lead to ringing behaviour during turn-off and considers the effect of temperature on the latter. Furthermore, the experimental results are backed by SPICE modelling to evaluate the contribution of different circuit components to oscillations. The study concludes with good design techniques that can suppress the effects discussed.

Item Type: Article
Uncontrolled Keywords: wide band gap semiconductors III-V semiconductors gallium compounds enhancement GaN HEMT switching parasitics inductance SPICE clamped Miller capacitance
Divisions: Div B > Electronics, Power & Energy Conversion
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 20:02
Last Modified: 10 Apr 2021 01:13
DOI: 10.3390/en10030407