CUED Publications database

Excellent mechanical bending stability of flexible A-IGZO TFT by dual gate dual sweep using TCAD simulation

Billah, MM and Hasan, MM and Chowdhury, MDH and Jang, J (2016) Excellent mechanical bending stability of flexible A-IGZO TFT by dual gate dual sweep using TCAD simulation. In: UNSPECIFIED pp. 1155-1158..

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Abstract

© (2016) by SID-the Society for Information Display. All rights reserved. We report mechanical bending effect on electrical performance of flexible amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) using TCAD simulation. Tensile bending stress for a single gate (SG) TFT exhibits higher electron concentration and tower resistivity along the channel than those of flat and compressive geometries. The dual gate (DG) TFT with dual gate sweep (DS) shows increased conductivity and improved bending stability. These findings are an important step toward the realization of high performance BG flexible TFTs for future display applications.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Aug 2017 01:21
Last Modified: 22 Aug 2017 01:34
DOI: