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Metastable state-induced consecutive step-like negative differential resistance behaviors in single crystalline VO<inf>2</inf> nanobeams

Sohn, JI and Cha, SN and Son, SB and Kim, JM and Welland, ME and Hong, WK (2017) Metastable state-induced consecutive step-like negative differential resistance behaviors in single crystalline VO<inf>2</inf> nanobeams. Nanoscale, 9. pp. 8200-8206. ISSN 2040-3364

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Abstract

We demonstrate the current-dependent consecutive appearance of two different negative differential resistance (NDR) transitions in a single crystalline VO nanobeam epitaxially grown on a c-cut sapphire substrate. It is revealed that the first NDR occurs at an approximately constant current level as a result of the carrier injection-induced transition, independent of a thermally induced phase transition. In contrast, it is observed that the second NDR exhibits a temperature-dependent behavior and current values triggering the metal-insulator transition (MIT) are strongly mediated by Joule heating effects in a phase coexisting temperature range. Moreover, we find that the electrically and thermally triggered MIT behavior can be closely related with the alternate occurrence of current-induced multiple insulating and metallic phase coexistence in the nanobeam. These findings indicate that the current density passing through VO plays a critical role in both the electrical and structural phase transitions. 2 2

Item Type: Article
Subjects: UNSPECIFIED
Divisions: Div B > Solid State Electronics and Nanoscale Science
Depositing User: Cron Job
Date Deposited: 17 Jul 2017 19:02
Last Modified: 10 Apr 2021 00:42
DOI: 10.1039/c7nr00318h